auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.46 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| 1500+ | 0.63 EUR |
| 4500+ | 0.57 EUR |
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Technische Details NVMFS5C450NLWFET1G onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40, Packaging: Bulk, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V, Power Dissipation (Max): 3.7W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 2V @ 11µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V, Qualification: AEC-Q101.
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NVMFS5C450NLWFET1G | Hersteller : onsemi |
 Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101 |
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