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NVMFS5C456NLWFHT1G

NVMFS5C456NLWFHT1G onsemi


nvmfs5c456nl-d.pdf Hersteller: onsemi
Description: T6 40V NCH LL IN U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.85 EUR
3000+0.79 EUR
4500+0.76 EUR
7500+0.74 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFS5C456NLWFHT1G onsemi

Description: T6 40V NCH LL IN U8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, Power Dissipation (Max): 3.6W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS5C456NLWFHT1G nach Preis ab 0.98 EUR bis 2.89 EUR

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NVMFS5C456NLWFHT1G NVMFS5C456NLWFHT1G Hersteller : onsemi nvmfs5c456nl-d.pdf Description: T6 40V NCH LL IN U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.83 EUR
100+1.24 EUR
500+0.98 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH