auf Bestellung 2890 Stücke:
Lieferzeit 217-231 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.13 EUR |
| 16+ | 3.43 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.51 EUR |
| 500+ | 2.3 EUR |
| 1000+ | 1.97 EUR |
| 1500+ | 1.87 EUR |
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Technische Details NVMFS5C670NT1G onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V, Power Dissipation (Max): 3.6W (Ta), 61W (Tc), Vgs(th) (Max) @ Id: 4V @ 53µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V.
Weitere Produktangebote NVMFS5C670NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFS5C670NT1G | Hersteller : ON Semiconductor |
 N Channel Power MOSFET |
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NVMFS5C670NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V |
Produkt ist nicht verfügbar |
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NVMFS5C670NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V |
Produkt ist nicht verfügbar |