NVMFS5C670NWFT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 53µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Technische Details NVMFS5C670NWFT1G onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 4V @ 53µA, Power Dissipation (Max): 3.6W (Ta), 61W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFS5C670NWFT1G nach Preis ab 1.82 EUR bis 5.89 EUR
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NVMFS5C670NWFT1G | onsemi |
MOSFETs T6 60V SG |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C670NWFT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMFS5C670NWFT1G |
|
Hersteller: onsemi
MOSFETs T6 60V SG
MOSFETs T6 60V SG
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.59 EUR |
| 10+ | 3.62 EUR |
| 100+ | 2.51 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.82 EUR |
| NVMFS5C670NWFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.89 EUR |
| 10+ | 3.83 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.14 EUR |