auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| 1500+ | 0.55 EUR |
| 4500+ | 0.5 EUR |
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Technische Details NVMFS5C673NLAFT1G-YE onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60, Packaging: Bulk, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V, Power Dissipation (Max): 3.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 35µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V, Qualification: AEC-Q101.
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NVMFS5C673NLAFT1G-YE | Hersteller : onsemi |
 Description: SINGLE N-CHANNEL POWER MOSFET 60Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Qualification: AEC-Q101 |
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