| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |
| 1500+ | 0.55 EUR |
| 4500+ | 0.5 EUR |
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Technische Details NVMFS5C673NLAFT1G-YE onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60, Power Dissipation (Max): 3.6W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Bulk, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 35µA.
Weitere Produktangebote NVMFS5C673NLAFT1G-YE
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
NVMFS5C673NLAFT1G-YE | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 60Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 35µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS5C673NLAFT1G-YE |
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Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 35µA
Description: SINGLE N-CHANNEL POWER MOSFET 60
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 35µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


