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NVMFS5C673NLWFAFT1G

NVMFS5C673NLWFAFT1G ON Semiconductor


NVMFS5C673NL_D-2319833.pdf Hersteller: ON Semiconductor
MOSFET TRENCH 6 60V NFET
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Technische Details NVMFS5C673NLWFAFT1G ON Semiconductor

Description: MOSFET N-CHANNEL 60V 50A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 35µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V.

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NVMFS5C673NLWFAFT1G Hersteller : ON Semiconductor nvmfs5c673nl-d.pdf
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NVMFS5C673NLWFAFT1G NVMFS5C673NLWFAFT1G Hersteller : ON Semiconductor nvmfs5c673nl-d.pdf Trans MOSFET N-CH 60V 14A Automotive 5-Pin(4+Tab) SO-FL T/R
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NVMFS5C673NLWFAFT1G Hersteller : onsemi nvmfs5c673nl-d.pdf Description: MOSFET N-CHANNEL 60V 50A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
NVMFS5C673NLWFAFT1G Hersteller : onsemi nvmfs5c673nl-d.pdf Description: MOSFET N-CHANNEL 60V 50A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar