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NVMFS5C680NLWFT1G

NVMFS5C680NLWFT1G onsemi

nvmfs5c680nl-d.pdf Hersteller: onsemi
MOSFETs T6 60V S08FL SINGLE
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10+1.80 EUR
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Technische Details NVMFS5C680NLWFT1G onsemi

Description: MOSFET N-CH 60V 8.1A/21A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 3.4W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMFS5C680NLWFT1G NVMFS5C680NLWFT1G Hersteller : onsemi nvmfs5c680nl-d.pdf Description: MOSFET N-CH 60V 8.1A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.02 EUR
100+1.36 EUR
500+1.08 EUR
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NVMFS5C680NLWFT1G Hersteller : ON Semiconductor nvmfs5c680nl-d.pdf
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NVMFS5C680NLWFT1G Hersteller : ONSEMI nvmfs5c680nl-d.pdf NVMFS5C680NLWFT1G SMD N channel transistors
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NVMFS5C680NLWFT1G NVMFS5C680NLWFT1G Hersteller : onsemi nvmfs5c680nl-d.pdf Description: MOSFET N-CH 60V 8.1A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH