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NVMFS5C682NLWFAFT1G

NVMFS5C682NLWFAFT1G onsemi

nvmfs5c682nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.93 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFS5C682NLWFAFT1G onsemi

Description: MOSFET N-CH 60V 8.8A/25A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Power Dissipation (Max): 3.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 2V @ 16µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMFS5C682NLWFAFT1G NVMFS5C682NLWFAFT1G Hersteller : onsemi nvmfs5c682nl-d.pdf MOSFETs TRENCH 6 60V NFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.52 EUR
10+1.71 EUR
25+1.67 EUR
100+1.20 EUR
500+0.97 EUR
1500+0.90 EUR
3000+0.87 EUR
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NVMFS5C682NLWFAFT1G NVMFS5C682NLWFAFT1G Hersteller : onsemi nvmfs5c682nl-d.pdf Description: MOSFET N-CH 60V 8.8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.07 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C682NLWFAFT1G Hersteller : ON Semiconductor NVMFS5C682NL-D-1219469.pdf MOSFET TRENCH 6 60V NFET
auf Bestellung 33000 Stücke:
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NVMFS5C682NLWFAFT1G NVMFS5C682NLWFAFT1G Hersteller : ON Semiconductor nvmfs5c682nl-d.pdf Trans MOSFET N-CH 60V 8.8A Automotive 5-Pin SO-FL EP T/R
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