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NVMFS6H800NWFT1G

NVMFS6H800NWFT1G onsemi

nvmfs6h800n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+3.6 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFS6H800NWFT1G onsemi

Description: MOSFET N-CH 80V 28A/203A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 330µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS6H800NWFT1G nach Preis ab 3.78 EUR bis 7.25 EUR

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NVMFS6H800NWFT1G NVMFS6H800NWFT1G Hersteller : onsemi nvmfs6h800n-d.pdf Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.95 EUR
10+ 5.84 EUR
100+ 4.73 EUR
500+ 4.2 EUR
Mindestbestellmenge: 3
NVMFS6H800NWFT1G NVMFS6H800NWFT1G Hersteller : onsemi NVMFS6H800N_D-2319731.pdf MOSFET TRENCH 8 80V NFET
auf Bestellung 40 Stücke:
Lieferzeit 1019-1023 Tag (e)
Anzahl Preis ohne MwSt
1+7.25 EUR
10+ 6.34 EUR
100+ 5.16 EUR
500+ 4.24 EUR
1500+ 3.78 EUR
NVMFS6H800NWFT1G Hersteller : ON Semiconductor nvmfs6h800n-d.pdf
auf Bestellung 1100 Stücke:
Lieferzeit 21-28 Tag (e)