NVMFS6H824NLWFT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 140µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Qualification: AEC-Q101
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Technische Details NVMFS6H824NLWFT1G onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 140µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H824NLWFT1G nach Preis ab 1.93 EUR bis 5.81 EUR
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NVMFS6H824NLWFT1G | ON Semiconductor |
Trans MOSFET N-CH 80V 20A Automotive 5-Pin DFNW EP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H824NLWFT1G | ON Semiconductor |
Trans MOSFET N-CH 80V 20A Automotive 5-Pin DFNW EP T/R |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H824NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 20A/110A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 140µA Power Dissipation (Max): 3.8W (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 2894 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H824NLWFT1G | onsemi |
MOSFETs T8 80V LL SO8FL |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H824NLWFT1G |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 20A Automotive 5-Pin DFNW EP T/R
Trans MOSFET N-CH 80V 20A Automotive 5-Pin DFNW EP T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.93 EUR |
| NVMFS6H824NLWFT1G |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 20A Automotive 5-Pin DFNW EP T/R
Trans MOSFET N-CH 80V 20A Automotive 5-Pin DFNW EP T/R
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 189+ | 2.87 EUR |
| NVMFS6H824NLWFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 20A/110A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 140µA
Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.18 EUR |
| NVMFS6H824NLWFT1G |
![]() |
Hersteller: onsemi
MOSFETs T8 80V LL SO8FL
MOSFETs T8 80V LL SO8FL
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.81 EUR |
| 10+ | 3.82 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2.02 EUR |


