auf Bestellung 9000 Stücke:
Lieferzeit 620-624 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.19 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.9 EUR |
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Technische Details NVMFS6H824NT1G onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V.
Weitere Produktangebote NVMFS6H824NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NVMFS6H824NT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 19A/103A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V |
Produkt ist nicht verfügbar |
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| NVMFS6H824NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 19A/103A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V |
Produkt ist nicht verfügbar |