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NVMFS6H824NWFT1G

NVMFS6H824NWFT1G ON Semiconductor

nvmfs6h824n-d.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 19A Automotive 5-Pin DFNW EP T/R
auf Bestellung 169500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1500+1.02 EUR
Mindestbestellmenge: 1500 Stücke
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Technische Details NVMFS6H824NWFT1G ON Semiconductor

Description: MOSFET N-CH 80V 19A/103A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 4V @ 140µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS6H824NWFT1G nach Preis ab 1.17 EUR bis 4.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFS6H824NWFT1G NVMFS6H824NWFT1G onsemi nvmfs6h824n-d.pdf Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1483500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.24 EUR
3000+1.17 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H824NWFT1G NVMFS6H824NWFT1G onsemi nvmfs6h824n-d.pdf MOSFETs T8 80V U8FL
auf Bestellung 2307 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.98 EUR
10+2.57 EUR
100+1.76 EUR
500+1.4 EUR
1000+1.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H824NWFT1G NVMFS6H824NWFT1G onsemi nvmfs6h824n-d.pdf Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1483765 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+2.57 EUR
100+1.76 EUR
500+1.41 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H824NWFT1G nvmfs6h824n-d.pdf
NVMFS6H824NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1483500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+1.24 EUR
3000+1.17 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H824NWFT1G nvmfs6h824n-d.pdf
NVMFS6H824NWFT1G
Hersteller: onsemi
MOSFETs T8 80V U8FL
auf Bestellung 2307 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.98 EUR
10+2.57 EUR
100+1.76 EUR
500+1.4 EUR
1000+1.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H824NWFT1G nvmfs6h824n-d.pdf
NVMFS6H824NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1483765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.01 EUR
10+2.57 EUR
100+1.76 EUR
500+1.41 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH