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NVMFS6H836NLT1G

NVMFS6H836NLT1G onsemi

nvmfs6h836nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.92 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFS6H836NLT1G onsemi

Description: MOSFET N-CH 80V 16A/77A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V, Power Dissipation (Max): 3.7W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2V @ 95µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V, Qualification: AEC-Q101.

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NVMFS6H836NLT1G NVMFS6H836NLT1G Hersteller : onsemi nvmfs6h836nl-d.pdf Description: MOSFET N-CH 80V 16A/77A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
11+1.71 EUR
100+1.33 EUR
500+1.12 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H836NLT1G Hersteller : ON Semiconductor nvmfs6h836nl-d.pdf NVMFS6H836NLT1G
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NVMFS6H836NLT1G Hersteller : ONSEMI nvmfs6h836nl-d.pdf NVMFS6H836NLT1G SMD N channel transistors
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