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NVMFS6H852NLT1G

NVMFS6H852NLT1G onsemi

nvmfs6h852nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.64 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFS6H852NLT1G onsemi

Description: MOSFET N-CH 80V 11A/42A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 45µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS6H852NLT1G nach Preis ab 0.54 EUR bis 1.51 EUR

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NVMFS6H852NLT1G NVMFS6H852NLT1G Hersteller : onsemi nvmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
14+ 1.3 EUR
100+ 0.9 EUR
500+ 0.75 EUR
Mindestbestellmenge: 12
NVMFS6H852NLT1G NVMFS6H852NLT1G Hersteller : onsemi NVMFS6H852NL_D-2319781.pdf MOSFET T8 80V LL SO8FL
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.51 EUR
10+ 1.31 EUR
100+ 0.91 EUR
500+ 0.76 EUR
1000+ 0.64 EUR
1500+ 0.57 EUR
3000+ 0.54 EUR
Mindestbestellmenge: 2
NVMFS6H852NLT1G Hersteller : ON Semiconductor nvmfs6h852nl-d.pdf
auf Bestellung 1460 Stücke:
Lieferzeit 21-28 Tag (e)
NVMFS6H852NLT1G Hersteller : ON Semiconductor nvmfs6h852nl-d.pdf Power, Single N-Channel MOSFET
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NVMFS6H852NLT1G NVMFS6H852NLT1G Hersteller : ON Semiconductor nvmfs6h852nl-d.pdf Power, Single N-Channel MOSFET Automotive AEC-Q101
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