NVMFS6H852NLT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.58 EUR |
| 3000+ | 0.53 EUR |
| 4500+ | 0.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS6H852NLT1G onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 45µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H852NLT1G nach Preis ab 0.54 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVMFS6H852NLT1G | Hersteller : onsemi |
MOSFETs T8 80V LL SO8FL |
auf Bestellung 248 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NVMFS6H852NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 11A/42A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| NVMFS6H852NLT1G | Hersteller : ON Semiconductor |
|
auf Bestellung 1460 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
| NVMFS6H852NLT1G | Hersteller : ON Semiconductor |
Power, Single N-Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
NVMFS6H852NLT1G | Hersteller : ON Semiconductor |
Power, Single N-Channel MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| NVMFS6H852NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 208A; 27W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 208A Power dissipation: 27W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 13.1mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |