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NVMFS6H852NLWFT1G

NVMFS6H852NLWFT1G onsemi

nvmfs6h852nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.68 EUR
3000+0.63 EUR
4500+0.60 EUR
7500+0.58 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFS6H852NLWFT1G onsemi

Description: MOSFET N-CH 80V 11A/42A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 45µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMFS6H852NLWFT1G NVMFS6H852NLWFT1G Hersteller : onsemi NVMFS6H852NL_D-1772080.pdf MOSFETs T8 80V LL SO8FL
auf Bestellung 7431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.52 EUR
10+1.25 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.67 EUR
1500+0.63 EUR
3000+0.60 EUR
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NVMFS6H852NLWFT1G NVMFS6H852NLWFT1G Hersteller : onsemi nvmfs6h852nl-d.pdf Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 79206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.51 EUR
100+1.00 EUR
500+0.79 EUR
Mindestbestellmenge: 8
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NVMFS6H852NLWFT1G Hersteller : ON Semiconductor nvmfs6h852nl-d.pdf Power, Single N-Channel MOSFET
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NVMFS6H852NLWFT1G NVMFS6H852NLWFT1G Hersteller : ON Semiconductor nvmfs6h852nl-d.pdf Power, Single N-Channel MOSFET Automotive AEC-Q101
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NVMFS6H852NLWFT1G Hersteller : ONSEMI nvmfs6h852nl-d.pdf NVMFS6H852NLWFT1G SMD N channel transistors
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