| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.22 EUR |
| 10+ | 1.52 EUR |
| 100+ | 1.19 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.86 EUR |
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Technische Details NVMFS6H864NLT1G onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H864NLT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NVMFS6H864NLT1G | onsemi |
 Description: MOSFET N-CH 80V 7A/22A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NVMFS6H864NLT1G | onsemi |
Description: MOSFET N-CH 80V 7A/22A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H864NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 22A Power dissipation: 17W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 97A Gate charge: 9nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
NVMFS6H864NLT1G | ON Semiconductor |
Trans MOSFET N-CH 80V 7A 5-Pin SO-FL EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H864NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H864NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H864NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 17W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 97A
Gate charge: 9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 97A; 17W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 22A
Power dissipation: 17W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 97A
Gate charge: 9nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H864NLT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 7A 5-Pin SO-FL EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 80V 7A 5-Pin SO-FL EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH