NVMFS6H864NLT1G ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.56 EUR |
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Technische Details NVMFS6H864NLT1G ON Semiconductor
Description: MOSFET N-CH 80V 7A/22A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H864NLT1G nach Preis ab 0.57 EUR bis 1.74 EUR
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NVMFS6H864NLT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 80V 7A Automotive AEC-Q101 5-Pin SO-FL EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H864NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 7A/22A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1385 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H864NLT1G | Hersteller : onsemi |
MOSFETs T8 80V LL SO8FL |
auf Bestellung 23890 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H864NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFS6H864NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7A 5-Pin(4+Tab) SO-FL T/R |
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NVMFS6H864NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7A Automotive AEC-Q101 5-Pin SO-FL EP T/R |
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NVMFS6H864NLT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 7A Automotive AEC-Q101 5-Pin SO-FL EP T/R |
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| NVMFS6H864NLT1G | Hersteller : ONSEMI |
NVMFS6H864NLT1G SMD N channel transistors |
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NVMFS6H864NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 7A/22A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |