NVMFS6H864NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 1500+ | 0.71 EUR |
| 3000+ | 0.65 EUR |
| 4500+ | 0.63 EUR |
| 7500+ | 0.6 EUR |
| 10500+ | 0.59 EUR |
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Technische Details NVMFS6H864NLT1G onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 20µA, Power Dissipation (Max): 3.5W (Ta), 33W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), FET Type: N-Channel.
Weitere Produktangebote NVMFS6H864NLT1G nach Preis ab 0.61 EUR bis 2.45 EUR
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NVMFS6H864NLT1G | onsemi |
MOSFETs T8 80V LL SO8FL |
auf Bestellung 22517 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H864NLT1G | onsemi |
Description: MOSFET N-CH 80V 7A/22A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads |
auf Bestellung 19273 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H864NLT1G | ON Semiconductor |
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auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H864NLT1G |
![]() |
Hersteller: onsemi
MOSFETs T8 80V LL SO8FL
MOSFETs T8 80V LL SO8FL
auf Bestellung 22517 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.71 EUR |
| 1500+ | 0.67 EUR |
| 3000+ | 0.61 EUR |
| NVMFS6H864NLT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Description: MOSFET N-CH 80V 7A/22A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
auf Bestellung 19273 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.45 EUR |
| 12+ | 1.55 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.82 EUR |
| NVMFS6H864NLT1G |
![]() |
Hersteller: ON Semiconductor
auf Bestellung 1470 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH

