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NVMFSC0D9N04CL

NVMFSC0D9N04CL onsemi

nvmfsc0d9n04cl-d.pdf
Hersteller: onsemi
MOSFETs 40V T6 LL IN 5X6 DUALCOOL
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Technische Details NVMFSC0D9N04CL onsemi

Description: MOSFET N-CH 40V 50A/316A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc), Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V, Power Dissipation (Max): 4.1W (Ta), 166W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6.15), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Qualification: AEC-Q101.

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NVMFSC0D9N04CL NVMFSC0D9N04CL onsemi nvmfsc0d9n04cl-d.pdf Description: MOSFET N-CH 40V 50A/316A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMFSC0D9N04CL NVMFSC0D9N04CL onsemi nvmfsc0d9n04cl-d.pdf Description: MOSFET N-CH 40V 50A/316A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFSC0D9N04CL NVMFSC0D9N04CL ONSEMI nvmfsc0d9n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 316A; Idm: 900A; 83W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 316A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 0.85mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFSC0D9N04CL NVMFSC0D9N04CL ON Semiconductor nvmfsc0d9n04cl-d.pdf Trans MOSFET N-CH 40V 50A 8-Pin DFN EP T/R Automotive AEC-Q101
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 Mindestbestellmenge: 3000 Stücke
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NVMFSC0D9N04CL nvmfsc0d9n04cl-d.pdf
NVMFSC0D9N04CL
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A/316A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFSC0D9N04CL nvmfsc0d9n04cl-d.pdf
NVMFSC0D9N04CL
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A/316A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFSC0D9N04CL nvmfsc0d9n04cl-d.pdf
NVMFSC0D9N04CL
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 316A; Idm: 900A; 83W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 316A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 0.85mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFSC0D9N04CL nvmfsc0d9n04cl-d.pdf
NVMFSC0D9N04CL
Hersteller: ON Semiconductor
Trans MOSFET N-CH 40V 50A 8-Pin DFN EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH