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NVMFWS005N10MCLT1G

NVMFWS005N10MCLT1G onsemi

nvmfs005n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.44 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFWS005N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V, Power Dissipation (Max): 3.8W (Ta), 131W (Tc), Vgs(th) (Max) @ Id: 3V @ 192µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWS005N10MCLT1G nach Preis ab 1.64 EUR bis 4.56 EUR

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NVMFWS005N10MCLT1G NVMFWS005N10MCLT1G Hersteller : onsemi nvmfs005n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
10+2.95 EUR
100+2.03 EUR
500+1.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS005N10MCLT1G Hersteller : ON Semiconductor nvmfs005n10mcl-d.pdf Power MOSFET, Single N-Channel
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NVMFWS005N10MCLT1G Hersteller : ON Semiconductor nvmfs005n10mcl-d.pdf Trans MOSFET N-CH 100V 18.4A Automotive 5-Pin DFNW EP T/R
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NVMFWS005N10MCLT1G Hersteller : ONSEMI nvmfs005n10mcl-d.pdf NVMFWS005N10MCLT1G SMD N channel transistors
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NVMFWS005N10MCLT1G Hersteller : onsemi NVMFS005N10MCL_D-2319495.pdf MOSFETs MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A Wettable flank option.
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