NVMFWS005N10MCLT1G onsemi
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 192µA
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details NVMFWS005N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3V @ 192µA, Power Dissipation (Max): 3.8W (Ta), 131W (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVMFWS005N10MCLT1G nach Preis ab 1.31 EUR bis 4.56 EUR
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NVMFWS005N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 131W (Tc) Vgs(th) (Max) @ Id: 3V @ 192µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS005N10MCLT1G | onsemi |
MOSFETs MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A Wettable flank option. |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMFWS005N10MCLT1G |
|
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.56 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.64 EUR |
| NVMFWS005N10MCLT1G |
|
Hersteller: onsemi
MOSFETs MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A Wettable flank option.
MOSFETs MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A Wettable flank option.
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.75 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.34 EUR |
| 1500+ | 1.31 EUR |