NVMFWS020N06CT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.89 EUR |
| 3000+ | 0.85 EUR |
| 4500+ | 0.84 EUR |
| 7500+ | 0.83 EUR |
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Technische Details NVMFWS020N06CT1G onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V, Power Dissipation (Max): 3.4W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWS020N06CT1G nach Preis ab 0.87 EUR bis 3.15 EUR
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NVMFWS020N06CT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS020N06CT1G | Hersteller : onsemi |
MOSFETs Power, Single, N-Channel, SO-8FL, 60 V, 19.6 mohm, 28 A |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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