Produkte > ONSEMI > NVMFWS025P04M8LT1G

NVMFWS025P04M8LT1G onsemi


nvmfs025p04m8l-d.pdf
Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.76 EUR
3000+0.7 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit: 10-14 Tag (e)
Mindestmenge: 1500 Stücke
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFWS025P04M8LT1G onsemi

Description: MV8 40V P-CH LL IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V, Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 255µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWS025P04M8LT1G nach Preis ab 0.94 EUR bis 2.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFWS025P04M8LT1G NVMFWS025P04M8LT1G onsemi nvmfs025p04m8l-d.pdf Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.87 EUR
12+1.81 EUR
100+1.2 EUR
500+0.94 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS025P04M8LT1G nvmfs025p04m8l-d.pdf
Hersteller: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.87 EUR
12+1.81 EUR
100+1.2 EUR
500+0.94 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH