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NVMFWS0D9N04XMT1G

NVMFWS0D9N04XMT1G onsemi


nvmfws0d9n04xm-d.pdf Hersteller: onsemi
Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3896 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.16 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFWS0D9N04XMT1G onsemi

Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 61.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3896 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWS0D9N04XMT1G nach Preis ab 2.33 EUR bis 6.14 EUR

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NVMFWS0D9N04XMT1G NVMFWS0D9N04XMT1G Hersteller : onsemi nvmfws0d9n04xm-d.pdf Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3896 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
10+4.04 EUR
100+2.84 EUR
500+2.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH