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NVMJS1D0N04CTWG

NVMJS1D0N04CTWG onsemi

nvmjs1d0n04c-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 46A/300A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.70 EUR
10+3.72 EUR
100+2.60 EUR
500+2.12 EUR
1000+1.96 EUR
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Technische Details NVMJS1D0N04CTWG onsemi

Description: MOSFET N-CH 40V 46A/300A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc), Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 166W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 190µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Qualification: AEC-Q101.

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NVMJS1D0N04CTWG Hersteller : ON Semiconductor nvmjs1d0n04c-d.pdf
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NVMJS1D0N04CTWG Hersteller : ONSEMI nvmjs1d0n04c-d.pdf NVMJS1D0N04CTWG SMD N channel transistors
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NVMJS1D0N04CTWG NVMJS1D0N04CTWG Hersteller : onsemi nvmjs1d0n04c-d.pdf Description: MOSFET N-CH 40V 46A/300A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH