NVMJST1D2N04CTXG onsemi
Hersteller: onsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 451A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V
Power Dissipation (Max): 454W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.58 EUR |
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Technische Details NVMJST1D2N04CTXG onsemi
Description: TRENCH 6 40V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 451A (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V, Power Dissipation (Max): 454W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 10-TCPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMJST1D2N04CTXG nach Preis ab 2.58 EUR bis 7.37 EUR
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NVMJST1D2N04CTXG | Hersteller : onsemi |
Description: TRENCH 6 40V LFPAK 5X7 Packaging: Cut Tape (CT) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 451A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 50A, 10V Power Dissipation (Max): 454W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 10-TCPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 38885 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMJST1D2N04CTXG | Hersteller : onsemi |
MOSFETs Single N-Channel Power MOSFET 40V, 268A, 1.2 mohm on Top Cool Package |
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