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NVMJST1D3N04CTXG

NVMJST1D3N04CTXG onsemi

nvmjst1d3n04c-d.pdf Hersteller: onsemi
Description: TRENCH 6 40V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 386A (Tc)
Rds On (Max) @ Id, Vgs: 1.39mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.99 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMJST1D3N04CTXG onsemi

Description: TRENCH 6 40V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 386A (Tc), Rds On (Max) @ Id, Vgs: 1.39mOhm @ 50A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMJST1D3N04CTXG NVMJST1D3N04CTXG Hersteller : onsemi nvmjst1d3n04c-d.pdf Description: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 386A (Tc)
Rds On (Max) @ Id, Vgs: 1.39mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.12 EUR
10+3.94 EUR
25+3.37 EUR
100+2.73 EUR
250+2.41 EUR
500+2.22 EUR
1000+2.05 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D3N04CTXG NVMJST1D3N04CTXG Hersteller : onsemi NVMJST1D3N04C_D-3082549.pdf MOSFETs Single N-Channel Power MOSFET, 40 V, 1.35 mohm on Top Cool Package
auf Bestellung 2966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.23 EUR
10+4.21 EUR
25+3.66 EUR
100+2.96 EUR
250+2.60 EUR
500+2.41 EUR
1000+2.24 EUR
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NVMJST1D3N04CTXG Hersteller : ONSEMI nvmjst1d3n04c-d.pdf NVMJST1D3N04CTXG SMD N channel transistors
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