NVMYS008N08LHTWG onsemi
Hersteller: onsemi
Description: T8 80V LL LFPAK
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Technische Details NVMYS008N08LHTWG onsemi
Description: T8 80V LL LFPAK, Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 2V @ 70µA, Power Dissipation (Max): 3.7W (Ta), 73W (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMYS008N08LHTWG | onsemi |
Description: T8 80V LL LFPAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 70µA Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMYS008N08LHTWG |
|
Hersteller: onsemi
Description: T8 80V LL LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: T8 80V LL LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH