NVMYS1D6N04CLT1G onsemi
Hersteller: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Tape & Reel (TR)
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Technische Details NVMYS1D6N04CLT1G onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK4 (5x6), Vgs(th) (Max) @ Id: 3V @ 210µA, Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMYS1D6N04CLT1G nach Preis ab 1.33 EUR bis 4.1 EUR
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3V @ 210µA Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 17875 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS1D6N04CLT1G |
|
Hersteller: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK4 (5x6)
Vgs(th) (Max) @ Id: 3V @ 210µA
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
auf Bestellung 17875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.1 EUR |
| 10+ | 2.63 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.33 EUR |