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NVMYS1D6N04CLTWG

NVMYS1D6N04CLTWG onsemi

NVMYS1D6N04CL_D-2307177.pdf Hersteller: onsemi
MOSFET Power MOSFET 40V, 1.07 mohm, 280 A, Single N-Channel LFPAK4 (Pb-Free)
auf Bestellung 3000 Stücke:
Lieferzeit 108-112 Tag (e)
Anzahl Preis
1+2.94 EUR
10+2.66 EUR
100+2.13 EUR
500+1.75 EUR
1000+1.45 EUR
3000+1.35 EUR
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Technische Details NVMYS1D6N04CLTWG onsemi

Description: T6 40V LL AIZU SINGLE NCH LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc), Vgs(th) (Max) @ Id: 3V @ 210µA, Supplier Device Package: LFPAK4 (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMYS1D6N04CLTWG nach Preis ab 1.79 EUR bis 4.07 EUR

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NVMYS1D6N04CLTWG NVMYS1D6N04CLTWG Hersteller : onsemi nvmys1d6n04cl-d.pdf Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.61 EUR
100+1.79 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS1D6N04CLTWG NVMYS1D6N04CLTWG Hersteller : onsemi nvmys1d6n04cl-d.pdf Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
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