NVR4501NT1G ON Semiconductor
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 259+ | 0.6 EUR |
| 346+ | 0.44 EUR |
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Technische Details NVR4501NT1G ON Semiconductor
Description: MOSFET N-CH 20V 3.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W (Tj), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V.
Weitere Produktangebote NVR4501NT1G nach Preis ab 0.35 EUR bis 1.22 EUR
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NVR4501NT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
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NVR4501NT1G | Hersteller : onsemi |
MOSFET NFET SOT23 20V 3.2A 80MO |
auf Bestellung 12380 Stücke: Lieferzeit 14-28 Tag (e) |
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NVR4501NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
auf Bestellung 2855 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVR4501NT1G | Hersteller : ON Semiconductor |
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auf Bestellung 758 Stücke: Lieferzeit 21-28 Tag (e) |
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NVR4501NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Gate charge: 6nC Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
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NVR4501NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NVR4501NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NVR4501NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NVR4501NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.2A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NVR4501NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
Produkt ist nicht verfügbar |
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NVR4501NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Gate charge: 6nC Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Kind of package: reel; tape |
Produkt ist nicht verfügbar |