
auf Bestellung 5055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.56 EUR |
10+ | 1.07 EUR |
100+ | 0.84 EUR |
500+ | 0.7 EUR |
1000+ | 0.52 EUR |
3000+ | 0.51 EUR |
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Technische Details NVTFS015N04CTAG onsemi
Description: MOSFET N-CH 40V 9.4A/27A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V, Power Dissipation (Max): 2.9W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS015N04CTAG nach Preis ab 0.69 EUR bis 1.57 EUR
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NVTFS015N04CTAG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1387 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS015N04CTAG | Hersteller : ON Semiconductor |
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auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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NVTFS015N04CTAG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVTFS015N04CTAG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTFS015N04CTAG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 7.5A, 10V Power Dissipation (Max): 2.9W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFS015N04CTAG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |