Produkte > ONSEMI > NVTFS015P03P8ZTAG
NVTFS015P03P8ZTAG

NVTFS015P03P8ZTAG onsemi


nvtfs015p03p8z-d.pdf
Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVTFS015P03P8ZTAG onsemi

Description: PT8P PORTFOLIO EXPANSION, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote NVTFS015P03P8ZTAG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVTFS015P03P8ZTAG NVTFS015P03P8ZTAG onsemi nvtfs015p03p8z-d.pdf Description: PT8P PORTFOLIO EXPANSION
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS015P03P8ZTAG NVTFS015P03P8ZTAG onsemi NVTFS015P03P8Z_D-2493661.pdf MOSFET Power MOSFET, Single, P-Channel, u8FL -30 V, 7.5 mohm, -88.6 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS015P03P8ZTAG nvtfs015p03p8z-d.pdf
NVTFS015P03P8ZTAG
Hersteller: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS015P03P8ZTAG NVTFS015P03P8Z_D-2493661.pdf
NVTFS015P03P8ZTAG
Hersteller: onsemi
MOSFET Power MOSFET, Single, P-Channel, u8FL -30 V, 7.5 mohm, -88.6 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH