NVTFS5820NLWFTWG onsemi

Description: MOSFET N-CH 60V 11A 8WDFN, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 21W (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3).