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NVTFS6H888NTAG

NVTFS6H888NTAG onsemi

nvtfs6h888n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.4 EUR
3000+0.36 EUR
4500+0.35 EUR
7500+0.33 EUR
10500+0.31 EUR
15000+0.3 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVTFS6H888NTAG onsemi

Description: MOSFET N-CH 80V 4.7A/12A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V, Power Dissipation (Max): 2.9W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 4V @ 15µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVTFS6H888NTAG nach Preis ab 0.46 EUR bis 1.5 EUR

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NVTFS6H888NTAG NVTFS6H888NTAG onsemi nvtfs6h888n-d.pdf Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 19326 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
20+0.93 EUR
100+0.6 EUR
500+0.46 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H888NTAG ON Semiconductor nvtfs6h888n-d.pdf
auf Bestellung 1445 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H888NTAG nvtfs6h888n-d.pdf
NVTFS6H888NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 4.7A/12A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 19326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.5 EUR
20+0.93 EUR
100+0.6 EUR
500+0.46 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS6H888NTAG nvtfs6h888n-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 1445 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH