NVTFWS005N04CTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.1 EUR |
| 3000+ | 1.02 EUR |
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Technische Details NVTFWS005N04CTAG onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFWS005N04CTAG nach Preis ab 0.99 EUR bis 2.48 EUR
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NVTFWS005N04CTAG | onsemi |
MOSFETs T6 40V SG NCH U8FL |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS005N04CTAG | onsemi |
Description: MOSFET N-CH 40V 17A/69A 8WDFN Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3.5V @ 40µA |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVTFWS005N04CTAG |
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Hersteller: onsemi
MOSFETs T6 40V SG NCH U8FL
MOSFETs T6 40V SG NCH U8FL
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.03 EUR |
| 1500+ | 0.99 EUR |
| NVTFWS005N04CTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 17A/69A 8WDFN
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Description: MOSFET N-CH 40V 17A/69A 8WDFN
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.48 EUR |
| 10+ | 2.02 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.22 EUR |