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NVTFWS008N04CTAG

NVTFWS008N04CTAG onsemi

NVTFS008N04C_D-2319619.pdf Hersteller: onsemi
MOSFET T6 40V SG NCH U8FL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.36 EUR
10+1.94 EUR
100+1.5 EUR
500+1.27 EUR
1000+1.04 EUR
1500+0.98 EUR
3000+0.93 EUR
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Technische Details NVTFWS008N04CTAG onsemi

Description: MOSFET N-CH 40V 14A/48A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Power Dissipation (Max): 3.1W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVTFWS008N04CTAG nach Preis ab 1.02 EUR bis 3.1 EUR

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NVTFWS008N04CTAG NVTFWS008N04CTAG Hersteller : onsemi nvtfs008n04c-d.pdf Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+1.98 EUR
100+1.34 EUR
500+1.07 EUR
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NVTFWS008N04CTAG Hersteller : ON Semiconductor nvtfs008n04c-d.pdf POWER MOSFET TRANSISTOR
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+1.32 EUR
500+1.15 EUR
1000+1.02 EUR
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NVTFWS008N04CTAG NVTFWS008N04CTAG Hersteller : onsemi nvtfs008n04c-d.pdf Description: MOSFET N-CH 40V 14A/48A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Qualification: AEC-Q101
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NVTFWS008N04CTAG Hersteller : ONSEMI nvtfs008n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFNW8
Case: WDFNW8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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