| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.98 EUR |
| 1500+ | 0.91 EUR |
| 3000+ | 0.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFWS008N04CTAG onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Power Dissipation (Max): 3.1W (Ta), 38W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFWS008N04CTAG nach Preis ab 1.07 EUR bis 3.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVTFWS008N04CTAG | onsemi |
 Description: MOSFET N-CH 40V 14A/48A 8WDFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 3.5V @ 30µA Power Dissipation (Max): 3.1W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 1494 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFWS008N04CTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 14A/48A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.1 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.07 EUR |