NVTFWS9D6P04M8LTAG ON Semiconductor
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.67 EUR |
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Technische Details NVTFWS9D6P04M8LTAG ON Semiconductor
Description: MOSFET P-CH 40V 13A/64A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.2W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 580µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFWS9D6P04M8LTAG nach Preis ab 0.69 EUR bis 2.48 EUR
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NVTFWS9D6P04M8LTAG | Hersteller : onsemi |
 Description: MOSFET P-CH 40V 13A/64A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS9D6P04M8LTAG | Hersteller : onsemi |
MOSFETs MOSFET - Power, Single P-Channel Wettable Option |
auf Bestellung 3443 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS9D6P04M8LTAG | Hersteller : onsemi |
Description: MOSFET P-CH 40V 13A/64A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 9090 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS9D6P04M8LTAG | Hersteller : ON Semiconductor |
MOSFET MV8 P INITIAL PROGRAM |
auf Bestellung 2620 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS9D6P04M8LTAG | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 40V 13A Automotive 8-Pin WDFNW EP T/R |
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NVTFWS9D6P04M8LTAG | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 40V 13A Automotive 8-Pin WDFNW EP T/R |
Produkt ist nicht verfügbar |
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| NVTFWS9D6P04M8LTAG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -64A; Idm: -311A; 38W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -64A Pulsed drain current: -311A Power dissipation: 38W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 34.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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| NVTFWS9D6P04M8LTAG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -64A; Idm: -311A; 38W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -64A Pulsed drain current: -311A Power dissipation: 38W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 34.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |