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NVTYS005N04CLTWG onsemi


nvtys005n04cl-d.pdf
Hersteller: onsemi
Description: T6 40V N-CH LL IN LFPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
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Technische Details NVTYS005N04CLTWG onsemi

Description: T6 40V N-CH LL IN LFPAK33, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2V @ 40µA, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc).

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NVTYS005N04CLTWG NVTYS005N04CLTWG onsemi nvtys005n04cl-d.pdf Description: T6 40V N-CH LL IN LFPAK33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVTYS005N04CLTWG nvtys005n04cl-d.pdf
Hersteller: onsemi
Description: T6 40V N-CH LL IN LFPAK33
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 75A (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH