NVTYS005N06CLTWG onsemi
Hersteller: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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Technische Details NVTYS005N06CLTWG onsemi
Description: T6 60V N-CH LL IN LFPAK33, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2.2V @ 75µA, Power Dissipation (Max): 3.2W (Ta), 76W (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTYS005N06CLTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NVTYS005N06CLTWG | onsemi |
Description: T6 60V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 76W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 75µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVTYS005N06CLTWG | onsemi |
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVTYS005N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 89A Pulsed drain current: 430A Power dissipation: 38W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVTYS005N06CLTWG |
|
Hersteller: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS005N06CLTWG |
|
Hersteller: onsemi
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS005N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 89A
Pulsed drain current: 430A
Power dissipation: 38W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 89A
Pulsed drain current: 430A
Power dissipation: 38W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH