NVTYS010N04CLTWG onsemi
Hersteller: onsemi
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.51 EUR |
14+ | 1.31 EUR |
100+ | 0.91 EUR |
500+ | 0.76 EUR |
1000+ | 0.65 EUR |
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Technische Details NVTYS010N04CLTWG onsemi
Description: T6 40V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Power Dissipation (Max): 3W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 20µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
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NVTYS010N04CLTWG | Hersteller : ON Semiconductor | Power MOSFET, Single N-Channel |
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NVTYS010N04CLTWG | Hersteller : onsemi |
Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTYS010N04CLTWG | Hersteller : onsemi | MOSFET MOSFET - Power, Single, N-Channel |
Produkt ist nicht verfügbar |