
NVTYS010N04CLTWG onsemi

Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
9+ | 2.15 EUR |
14+ | 1.35 EUR |
100+ | 0.89 EUR |
500+ | 0.70 EUR |
1000+ | 0.63 EUR |
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Technische Details NVTYS010N04CLTWG onsemi
Description: T6 40V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Power Dissipation (Max): 3W (Ta), 32W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 20µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTYS010N04CLTWG nach Preis ab 0.52 EUR bis 1.70 EUR
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NVTYS010N04CLTWG | Hersteller : onsemi |
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auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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NVTYS010N04CLTWG | Hersteller : ON Semiconductor |
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NVTYS010N04CLTWG | Hersteller : ONSEMI |
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NVTYS010N04CLTWG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |