NVTYS010N06CLTWG onsemi
Hersteller: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.92 EUR |
| 12+ | 1.83 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
8 Stücke
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Technische Details NVTYS010N06CLTWG onsemi
Description: T6 60V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V, Power Dissipation (Max): 3.1W (Ta), 47W (Tc), Vgs(th) (Max) @ Id: 2V @ 35µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTYS010N06CLTWG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
NVTYS010N06CLTWG | onsemi |
Description: T6 60V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 47W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVTYS010N06CLTWG | onsemi |
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVTYS010N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 51A Pulsed drain current: 217A Power dissipation: 23W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVTYS010N06CLTWG |
|
Hersteller: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS010N06CLTWG |
|
Hersteller: onsemi
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE
MOSFETs T6 60V N-CH LL IN LFPAK33 PACKAGE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS010N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 217A
Power dissipation: 23W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 51A
Pulsed drain current: 217A
Power dissipation: 23W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH