| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.96 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.87 EUR |
| 3000+ | 0.82 EUR |
| 6000+ | 0.77 EUR |
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Technische Details NVTYS025P04M8LTWG onsemi
Description: MV8 40V P-CH LL IN LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V, Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc), Vgs(th) (Max) @ Id: 3V @ 255µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.
Weitere Produktangebote NVTYS025P04M8LTWG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NVTYS025P04M8LTWG | onsemi |
 Description: MV8 40V P-CH LL IN LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 255µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVTYS025P04M8LTWG |
|
Hersteller: onsemi
Description: MV8 40V P-CH LL IN LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 255µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MV8 40V P-CH LL IN LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 255µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH