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Technische Details NX3008CBKV,115 Nexperia
Description: NEXPERIA - NX3008CBKV,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1 ohm, tariffCode: 85411000, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 400mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 400mA, Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm, Verlustleistung, p-Kanal: 330mW, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-666, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 330mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote NX3008CBKV,115 nach Preis ab 0.13 EUR bis 1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NX3008CBKV,115 | Nexperia |
 Trans MOSFET N/P-CH 30V 0.4A/0.22A 6-Pin SOT-666 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3008CBKV,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.4A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
auf Bestellung 2808 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3008CBKV,115 | Nexperia |
MOSFETs NX3008CBKV/SOT666/SOT6 |
auf Bestellung 2506 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3008CBKV,115 | NEXPERIA |
Description: NEXPERIA - NX3008CBKV,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 400mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3008CBKV,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.4A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NX3008CBKV,115 | NXP Semiconductors |
NX3008CBKV,115 |
auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) |
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| NX3008CBKV,115 |
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Hersteller: Nexperia
Trans MOSFET N/P-CH 30V 0.4A/0.22A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 30V 0.4A/0.22A 6-Pin SOT-666 T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.15 EUR |
| 8000+ | 0.13 EUR |
| NX3008CBKV,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
auf Bestellung 2808 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 42+ | 0.5 EUR |
| 58+ | 0.37 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| NX3008CBKV,115 |
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Hersteller: Nexperia
MOSFETs NX3008CBKV/SOT666/SOT6
MOSFETs NX3008CBKV/SOT666/SOT6
auf Bestellung 2506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| 4000+ | 0.18 EUR |
| 8000+ | 0.15 EUR |
| NX3008CBKV,115 |
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Hersteller: NEXPERIA
Description: NEXPERIA - NX3008CBKV,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 400mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm
Verlustleistung, p-Kanal: 330mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 330mW
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - NX3008CBKV,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 400mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm
Verlustleistung, p-Kanal: 330mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 330mW
Betriebstemperatur, max.: 150°C
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1 EUR |
| 410+ | 0.57 EUR |
| 646+ | 0.33 EUR |
| 870+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| NX3008CBKV,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| NX3008CBKV,115 |
|
Hersteller: NXP Semiconductors
NX3008CBKV,115
NX3008CBKV,115
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2241+ | 0.29 EUR |