NX3008NBKVL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 30V 400MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7003 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 0.68 EUR |
| 56+ | 0.47 EUR |
| 115+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.11 EUR |
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Technische Details NX3008NBKVL Nexperia USA Inc.
Description: MOSFET N-CH 30V 400MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V, Power Dissipation (Max): 350mW (Ta), 1.14W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NX3008NBKVL nach Preis ab 0.086 EUR bis 0.68 EUR
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NX3008NBKVL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 400MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |