| Anzahl | Preis |
|---|---|
| 3000+ | 0.079 EUR |
| 6000+ | 0.068 EUR |
| 9000+ | 0.055 EUR |
| 15000+ | 0.051 EUR |
| 21000+ | 0.048 EUR |
| 30000+ | 0.046 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NX3020NAKS,115 Nexperia
Description: NEXPERIA - NX3020NAKS,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 180 mA, 180 mA, 2.7 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 180mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 180mA, Drain-Source-Durchgangswiderstand, p-Kanal: 2.7ohm, Verlustleistung, p-Kanal: 375mW, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 2.7ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 375mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote NX3020NAKS,115 nach Preis ab 0.069 EUR bis 0.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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NX3020NAKS,115 | Nexperia |
 Trans MOSFET N-CH 30V 0.18A 6-Pin TSSOP T/R |
auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKS,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKS,115 | Nexperia |
Trans MOSFET N-CH 30V 0.18A 6-Pin TSSOP T/R |
auf Bestellung 161145 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKS,115 | Nexperia |
MOSFETs NX3020NAKS/SOT363/SC-88 |
auf Bestellung 37437 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKS,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active |
auf Bestellung 3240 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKS,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 110mA; Idm: 0.72A; 375mW Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Case: SC88; SOT363; TSSOP6 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.11A Gate charge: 0.44nC Power dissipation: 375mW On-state resistance: 9.2Ω Pulsed drain current: 0.72A Gate-source voltage: ±20V |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKS,115 | NEXPERIA |
Description: NEXPERIA - NX3020NAKS,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 180 mA, 180 mA, 2.7 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 180mA Drain-Source-Durchgangswiderstand, p-Kanal: 2.7ohm Verlustleistung, p-Kanal: 375mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 2.7ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 375mW Betriebstemperatur, max.: 150°C |
auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NX3020NAKS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 0.18A 6-Pin TSSOP T/R
Trans MOSFET N-CH 30V 0.18A 6-Pin TSSOP T/R
auf Bestellung 57000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.085 EUR |
| NX3020NAKS,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.089 EUR |
| NX3020NAKS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 0.18A 6-Pin TSSOP T/R
Trans MOSFET N-CH 30V 0.18A 6-Pin TSSOP T/R
auf Bestellung 161145 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3927+ | 0.14 EUR |
| 10000+ | 0.12 EUR |
| 100000+ | 0.1 EUR |
| NX3020NAKS,115 |
|
Hersteller: Nexperia
MOSFETs NX3020NAKS/SOT363/SC-88
MOSFETs NX3020NAKS/SOT363/SC-88
auf Bestellung 37437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.42 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.083 EUR |
| 9000+ | 0.074 EUR |
| 24000+ | 0.069 EUR |
| NX3020NAKS,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: MOSFET 2N-CH 30V 0.18A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 3240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 67+ | 0.26 EUR |
| 107+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| NX3020NAKS,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 110mA; Idm: 0.72A; 375mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.11A
Gate charge: 0.44nC
Power dissipation: 375mW
On-state resistance: 9.2Ω
Pulsed drain current: 0.72A
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 110mA; Idm: 0.72A; 375mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.11A
Gate charge: 0.44nC
Power dissipation: 375mW
On-state resistance: 9.2Ω
Pulsed drain current: 0.72A
Gate-source voltage: ±20V
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| NX3020NAKS,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - NX3020NAKS,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 180 mA, 180 mA, 2.7 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 180mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 180mA
Drain-Source-Durchgangswiderstand, p-Kanal: 2.7ohm
Verlustleistung, p-Kanal: 375mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 2.7ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 375mW
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - NX3020NAKS,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 180 mA, 180 mA, 2.7 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 180mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 180mA
Drain-Source-Durchgangswiderstand, p-Kanal: 2.7ohm
Verlustleistung, p-Kanal: 375mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-363
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 2.7ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 375mW
Betriebstemperatur, max.: 150°C
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)