NX3020NAKW,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 180MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
Description: MOSFET N-CH 30V 180MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
auf Bestellung 306000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.075 EUR |
6000+ | 0.069 EUR |
9000+ | 0.057 EUR |
30000+ | 0.056 EUR |
75000+ | 0.051 EUR |
150000+ | 0.044 EUR |
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Produktbewertung abgeben
Technische Details NX3020NAKW,115 Nexperia USA Inc.
Description: NEXPERIA - NX3020NAKW,115 - Leistungs-MOSFET, n-Kanal, 30 V, 180 mA, 2.7 ohm, SOT-323, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 180mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.2V, euEccn: NLR, Verlustleistung: 300mW, Bauform - Transistor: SOT-323, Anzahl der Pins: 3Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 2.7ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote NX3020NAKW,115 nach Preis ab 0.049 EUR bis 0.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NX3020NAKW,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.11A Power dissipation: 0.3W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Gate charge: 0.44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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NX3020NAKW,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.11A; 300mW; SC70,SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.11A Power dissipation: 0.3W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Gate charge: 0.44nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKW,115 | Hersteller : Nexperia | MOSFET NX3020NAKW/SOT323/SC-70 |
auf Bestellung 81544 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKW,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 180MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 260mW (Ta), 1.1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V |
auf Bestellung 310439 Stücke: Lieferzeit 10-14 Tag (e) |
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NX3020NAKW,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - NX3020NAKW,115 - Leistungs-MOSFET, n-Kanal, 30 V, 180 mA, 2.7 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.7ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 7939 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKW,115 | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 0.18A 3-Pin SC-70 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKW,115 | Hersteller : NXP |
N-MOSFET 30V 180mA 260mW 4.5Ω NX3020NAKW TNX3020nakw Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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