 
NX7002AK,215 Nexperia
 Hersteller: Nexperia
                                                Hersteller: NexperiaN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 7093+ | 0.02 EUR | 
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Technische Details NX7002AK,215 Nexperia
Description: NEXPERIA - NX7002AK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 190 mA, 4.5 ohm, TO-236AB, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 190mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.6V, euEccn: NLR, Verlustleistung: 265mW, Bauform - Transistor: TO-236AB, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 4.5ohm, SVHC: No SVHC (21-Jan-2025). 
Weitere Produktangebote NX7002AK,215 nach Preis ab 0.02 EUR bis 0.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||||
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|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | auf Bestellung 39000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | auf Bestellung 828000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | auf Bestellung 828000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia USA Inc. |  Description: MOSFET N-CH 60V 190MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V | auf Bestellung 279000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | auf Bestellung 633000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : NXP Semiconductors |  Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R | auf Bestellung 359600 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | auf Bestellung 904000 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : NXP Semiconductors |  Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R | auf Bestellung 31428 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : NEXPERIA |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.12A; 325mW; SOT23,TO236AB Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: 0.12A Power dissipation: 325mW On-state resistance: 6.2Ω Gate-source voltage: ±20V Drain-source voltage: 60V Case: SOT23; TO236AB Kind of channel: enhancement Features of semiconductor devices: logic level Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 12840 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : NEXPERIA |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.12A; 325mW; SOT23,TO236AB Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: 0.12A Power dissipation: 325mW On-state resistance: 6.2Ω Gate-source voltage: ±20V Drain-source voltage: 60V Case: SOT23; TO236AB Kind of channel: enhancement Features of semiconductor devices: logic level Type of transistor: N-MOSFET | auf Bestellung 12840 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | auf Bestellung 8048 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia USA Inc. |  Description: MOSFET N-CH 60V 190MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V | auf Bestellung 279631 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : Nexperia |  MOSFETs SOT23    N-CH  60V .19A | auf Bestellung 133646 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | NX7002AK,215 | Hersteller : NEXPERIA |  Description: NEXPERIA - NX7002AK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 190 mA, 4.5 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 265mW Bauform - Transistor: TO-236AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4.5ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 30456 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
|   | NX7002AK,215 | Hersteller : NEXPERIA |  Trans MOSFET N-CH 60V 0.19A 3-Pin SOT-23 T/R | auf Bestellung 123000 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| NX7002AK,215 | Hersteller : NXP |  Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB NX7002AK,215 TNX7002ak Anzahl je Verpackung: 100 Stücke | auf Bestellung 2500 Stücke:Lieferzeit 7-14 Tag (e) | 
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| NX7002AK,215 | Hersteller : NXP |  Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB NX7002AK,215 TNX7002ak Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke:Lieferzeit 7-14 Tag (e) | 
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| NX7002AK,215 | Hersteller : NXP |  Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB NX7002AK,215 TNX7002ak Anzahl je Verpackung: 100 Stücke | auf Bestellung 245 Stücke:Lieferzeit 7-14 Tag (e) | 
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| NX7002AK,215 | Hersteller : NXP/Nexperia/We-En |  N-канальний ПТ; Udss, В = 60; Id = 190 мА; Ptot, Вт = 0,265; Тип монт. = smd; Ciss, пФ @ Uds, В = 17 @ 10; Qg, нКл = 0,43 @ 4,5 В; Rds = 4,5 Ом @ 100 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,1 В @ 250 мкА; SOT-23-3 | auf Bestellung 15 Stücke:Lieferzeit 14-21 Tag (e) | ||||||||||||||||||||
|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | Produkt ist nicht verfügbar | |||||||||||||||||||
|   | NX7002AK,215 | Hersteller : Nexperia |  N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology | Produkt ist nicht verfügbar | |||||||||||||||||||
| NX7002AK.215 | Hersteller : NXP USA Inc. |  Description: NOW NEXPERIA NX7002AK - SMALL SI | Produkt ist nicht verfügbar |