| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.35 EUR |
| 19+ | 0.18 EUR |
| 100+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.057 EUR |
| 9000+ | 0.048 EUR |
| 24000+ | 0.044 EUR |
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Technische Details NX7002AKAR Nexperia
Description: MOSFET N-CH 60V TO-236AB, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 265mW (Ta), 1.33W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote NX7002AKAR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NX7002AKAR | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V TO-236ABQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 265mW (Ta), 1.33W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NX7002AKAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V TO-236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH