NX7002BKMBYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 350MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 350mW (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.061 EUR |
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Technische Details NX7002BKMBYL Nexperia USA Inc.
Description: MOSFET N-CH 60V 350MA DFN1006B-3, Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 350mW (Ta), 3.1W (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NX7002BKMBYL nach Preis ab 0.056 EUR bis 0.51 EUR
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NX7002BKMBYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 350MA DFN1006B-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1006B-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V |
auf Bestellung 10263 Stücke: Lieferzeit 10-14 Tag (e) |
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NX7002BKMBYL | Hersteller : Nexperia |
MOSFETs NX7002BKMB/SOT883B/XQFN3 |
auf Bestellung 25378 Stücke: Lieferzeit 10-14 Tag (e) |
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