NX7002BKW115 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: NOW NEXPERIA NX7002BKW SMALL SIG
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), 330mA (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 265mW (Ta), 1.449W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 31868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15000+ | 0.03 EUR |
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Technische Details NX7002BKW115 NXP Semiconductors
Description: NOW NEXPERIA NX7002BKW SMALL SIG, Packaging: Bulk, Part Status: Active, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), 330mA (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V, Power Dissipation (Max): 265mW (Ta), 1.449W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SC-70, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V.
Weitere Produktangebote NX7002BKW115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NX7002BKW115 | Hersteller : NXP |
Description: NXP - NX7002BKW115 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 31868 Stücke: Lieferzeit 14-21 Tag (e) |