NXH006P120M3F2PTHG onsemi

Description: MOSFET 2N-CH 1200V 191A 36PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 556W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 191A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V, Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V, Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 80mA, Supplier Device Package: 36-PIM (56.7x62.8).