NXH010P120MNF1PNG onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 192.39 EUR |
| 28+ | 166.33 EUR |
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Technische Details NXH010P120MNF1PNG onsemi
Description: MOSFET 2N-CH 1200V 114A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 250W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 114A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V, Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 40mA.
Weitere Produktangebote NXH010P120MNF1PNG nach Preis ab 175.38 EUR bis 214.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NXH010P120MNF1PNG | Hersteller : onsemi |
MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 10MOHM(NI-PLATED) |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH010P120MNF1PNG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 114A Automotive |
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